ll42, ll43 document number 85672 rev. 1.5, 05-aug-10 vishay semiconductors www.vishay.com 1 17205 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? for general purpose applications ? these diodes feature very low turn-on voltage and fast switching. ? these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. ? these diodes are also available in the do-35 case with type designations bat42 to bat43 and in the sod-123 case with type designations bat42w-v to bat43w-v. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: minimelf sod-80 weight: approx. 31 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks ll42 ll42-gs18 or ll42-gs08 - tape and reel ll43 ll43-gs18 or LL43-GS08 - tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 30 v forward continuous current i f 200 1) ma repetitive peak forward current t p < 1 s, < 0.5 i frm 500 1) ma surge forward current t p = 10 ms i fsm 4 1) a power dissipation 1) t amb = 65 c p tot 200 1) mw
www.vishay.com 2 document number 85672 rev. 1.5, 05-aug-10 ll42, ll43 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified 1) pulse test t p < 300 s, t p /t < 0.02 typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) k/w junction temperature t j 125 c ambient operating temperature range t amb - 55 to + 125 c storage temperature range t stg - 65 to + 150 c parameter test condition part symbol min. ty p. max. unit reverse breakdown voltage i r = 100 a (pulsed) v (br) 30 v leakage current 1) v r = 25 v i r 0.5 a v r = 25 v, t j = 100 c i r 100 a forward voltage 1) i f = 200 ma v f 1000 mv i f = 10 ma ll42 v f 400 mv i f = 50 ma ll42 v f 650 mv i f = 2 ma ll43 v f 260 330 mv i f = 15 ma ll43 v f 450 mv diode capacitance v r = 1 v, f = 1 mhz c d 7pf reverse recovery time i f = 10 ma, i r = 10 ma, i r = 1 ma, r l = 100 t rr 5ns rectification efficieny r l = 15 k , c l = 300 pf, f = 45 mhz, v rf = 2 v v 80 % figure 1. admissible power dissi pation vs. ambient temperature 200 1 8 442 t am b - am b ient temperat u re (c) 250 200 150 100 50 50 100 150 0 0 p tot - po w er dissipation (m w ) figure 2. typical reverse characteristics 1 8 443 1200 1000 8 00 600 400 200 0 i- for w ard c u rrent (ma) f 1000 100 10 1 0.1 0.01 v f - instantaneo u s for w ard v oltage (m v ) 25 c 125 c - 40 c
ll42, ll43 document number 85672 rev. 1.5, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): minimelf sod-80 figure 3. typical reve rse characteristics 1000 100 10 1 0.1 0.01 1 8 444 0 1020304050 v r - re v erse v oltage ( v ) 125 c 100 c 75 c 50 c 25 c i - re v erse leackage c u rrent ( a) r figure 4. typical capacit ance vs. reverse voltage 1 8 445 14 12 10 8 6 4 2 0 0102030 v r - re v erse v oltage ( v ) c - diode capacitance (pf) d 51525 cathode indification 0.47 (0.019) max. 2.5 (0.09 8 ) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. 2 (0.079) min. 1.6 (0.063) 1.4 (0.055) foot print recommendation: * * the gap b et w een pl u g and glass can b e either on cathode or anode side doc u ment no.:6.560-5005.01-4 re v . 8 - date: 07.j u ne.2006 96 12070
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